SPA11N80C3 MOSFET Transistor

A MOSFET (Metal Oxide Semiconductor FET) is a voltage-controlled field-effect transistor. These transistors have an insulated gate, where the gate is separated from the main current-carrying channel by a silicon oxide layer, preventing current flow through the gate. As a result, MOSFETs function like a voltage-controlled resistor and offer extremely high input impedance.

The 11N80C3 MOSFET Transistor is a high-current device that utilizes advanced technology, capable of handling up to 11 amps of current. Due to its low rise time, this SPA11N80C3 MOSFET Transistor is ideal for high-speed switching applications. Additionally, the 11N80C3 N-Channel MOSFET has a low gate capacitance of 64 nanofarads, reducing input charging and ensuring minimal frequency impact at higher speeds. With a drain-source voltage rating of 800V, it is well-suited for high-power application