IRF520N MOSFET

Mosfet transistors are actually another type of fet transistors with the difference that the gate terminal of the mosfet transistor is insulated in terms of the current-carrying channel, which is why these transistors are called insulated gate transistors. the irf520n transistor is of the n-channel type, with a drain-source voltage of 100 volts and a drain current of 10 amperes. the irf520n mosfet transistor, packaged in to-220ab, has low noise and a power rating of 50 watts, acting as a relay or used as a controller in motor drives. irf520n, with its low input capacitance, is used in controller applications, and mosfets can be used as a primary switch in high-efficiency circuits, high-speed dc-dc converters.

Application of IRF520N MOSFET transistor:

1. relay and solenoid driver
2. regulator
3. dc to dc and dc to ac converters
4. audio amplifiers
5. motor control
6. environmental automation

Specifications of irf520n mosfet  :

1. maximum drain-source voltage (vds): 100 volts
2. maximum gate-source voltage (vgs): 20 volts
3. maximum drain current (id): 10 amps
4. drain-source saturation current (idss): 0.01 amps
5. maximum junction temperature (tj): 175 degrees celsius
6. rise time (tr): 25 nanoseconds
7. input capacitance small signal (ciss): 460 picofarads
8. drain-source resistance (rds): 0.115 ohms
9. package type: to220