50 PCS MMBT2907-2F Transistor with SOT23 Package

Note: This product is non-returnable.

The MMBT2907-2F Transistor with SOT23 Package is a widely used PNP transistor in various electronic circuits. Its compact SOT23 package allows for easy integration in space-constrained designs, making it simple to mount on printed circuit boards. This component can withstand a collector-to-emitter and collector-to-base voltage of up to -60V (reverse) and an emitter-to-base voltage of -5V. With a maximum collector current of 0.8A and a collector power rating of 0.35W, this MMBT2907 Transistor is ideal for low to medium power applications.

The transistor’s DC current gain (hFE) ranges from 100 to 300, enhancing signal amplification quality in circuits. Its transition frequency reaches up to 200 MHz, enabling its use in high-frequency applications and fast switching circuits. Furthermore, its operating and storage temperature range of -55°C to +150°C ensures reliable performance under various environmental conditions. Due to its technical reliability and compact SOT23 package, this SOT23 Transistor is commonly used in amplifiers, switches, and controllers across different electronic designs.

This product is particularly suitable for projects requiring stable operation and adequate voltage and current handling. Thanks to its compact SOT23 package, the MMBT2907-2F Transistor is popular in portable devices and modern electronic designs with limited space. Overall, with its combination of voltage tolerance, current handling, high gain, and high frequency, the MMBT2907 Transistor stands out as a reliable and efficient choice in the electronics market.

Applications of the MMBT2907 Transistor

1. Small audio amplifiers
2. Electronic switching circuits
3. Small motor control in robotics
4. Overcurrent protection circuits

Specifications of the MMBT2907 Transistor

1. Transistor Type: PNP
2. Collector-Emitter Breakdown Voltage (V_CEO): -40 V
3. Collector-Base Breakdown Voltage (V_CBO): -60 V
4. Emitter-Base Breakdown Voltage (V_EBO): -5 V
5. Continuous Collector Current (I_C): -0.8 A
6. Collector Power Dissipation (P_D): 0.35 W
7. DC Current Gain (h_FE): 100–300
8. Collector-Emitter Saturation Voltage (V_CE(sat)): Max -1.6 V at 0.5 A
9. Base-Emitter Saturation Voltage (V_BE(sat)): Max -2.6 V at 0.5 A
10. Input Capacitance (C_IBO): Max 30 pF at 2 V
11. Output Capacitance (C_OBO): Max 8 pF at 10 V
12. Delay Time (t_d): Max 10 ns
13. Turn-On Time (t_on): Max 45 ns
14. Turn-Off Time (t_off): Max 100 ns
15. Storage Time (t_s): Max 80 ns
16. Fall Time (t_f): Max 30 ns
17. Thermal Resistance Junction-to-Ambient (R_θJA): Max 357 °C/W
18. Thermal Resistance Junction-to-Case (R_θJC): Max 160 °C/W
19. Thermal Resistance Junction-to-Lead (R_θJL): Max 210 °C/W
20. Operating and Storage Temperature (T_J, T_STG): -55 °C to +150 °C

Documents:

Download the MMBT2907 Transistor Datasheet