MJE3055T NPN Power Transistor

Bipolar Junction Transistors (BJTs) are current-regulating components, where the current flowing from the emitter to the collector is proportional to the bias voltage applied to the base. Due to this, they function as current-controlled switches. The base current controls the larger collector currents, which is the fundamental principle behind transistor operation.

These are transistors designed to handle high collector currents, typically able to withstand several amps, and the MJE3055T is considered a MJE3055T Power Transistor or high-current transistor. It features three pins with a DIP format and is packaged in a TO-220 casing.

The MJE3055T NPN Transistor has a maximum collector-emitter voltage of 60V, making it suitable for switching circuits and power supplies. This MJE3055T NPN Power Transistor is an NPN type, and its PNP counterpart is the MJE2955T Transistor.

Applications of the MJE3055T Power Transistor

1. Switching circuits
2. Power supply circuits
3. Motor drivers

Specifications of the MJE3055T Power Transistor

1. Package Type: TO-220
2. Transistor Type: NPN
3. Maximum DC Collector Current (Ic): 10 A
4. Maximum Power Dissipation: 75 W
5. Maximum Collector-Emitter Voltage (VCEO): 60 V
6. Maximum Collector-Base Voltage (VCBO): 70 V
7. Maximum Emitter-Base Voltage (VEBO): 5 V
8. Maximum Operating Frequency: 2 MHz
9. Transistor Configuration: Single
10. Mounting Type: Through Hole
11. Pin Count: 3
12. Dimensions: 9.15 x 10.4 x 4.6 mm
13. Maximum Junction Temperature: 150°C

Documents:

MJE3055T NPN Transistor Datasheet