IRLB4132 Transistor Mosfet

The IRLB4132 Mosfet is an N-channel power MOSFET in a TO-220 package, designed for high-current and high-efficiency switching applications. It features low gate impedance and a very low drain-to-source on-resistance of approximately 3.3 mΩ, which helps minimize power losses and heat generation during operation.

One of the key advantages of MOSFETs over conventional transistors is their ability to handle much higher drain currents. With a maximum drain current of up to 78A, the IRLB4132 is widely used in power converters, battery chargers, DC-DC converters, and UPS systems. Its high current capability and low RDS(on) make it an excellent choice for high-power switching and power management applications.

N-Channel IRLB4132 Application:

1. Voltage converters and DC-DC converters
2. UPS (Uninterruptible Power Supply) systems
3. Low-voltage power electronics equipment

Transistor Mosfet Specification:

1. Operating temperature range: −55°C to +150°C
2. MOSFET type: N-channel
3. Gate-to-source charge/capacitance: 54 nC @ VGS = 4.5 V
4. Maximum gate-to-source voltage (VGS max): ±20 V
5. Maximum power dissipation: 140 W
6. Drain-to-source voltage (VDS max): 30 V
7. Drain current at 25°C (ID): 78 A
8. Drain-to-source on-resistance (RDS(on)): 3.3 mΩ @ VGS = 10 V, ID = 78 A
9. Gate threshold voltage (VGS(th)): 3.7 V @ ID = 150 µA
10. Package: TO-220

Documents:

IRLB4132 Mosfet Datasheet