IRFP4227PBF Transistor

A MOSFET (Metal Oxide Semiconductor FET) is a field-effect transistor controlled by voltage. These transistors have an insulated gate, meaning the gate is separated from the main current-carrying channel by a silicon oxide layer, so no current flows through the gate. This makes MOSFETs act like a voltage-controlled resistor, offering extremely high input impedance.

The IRFP4227 MOSFET is an IRFP4227 N-channel MOSFET with a maximum drain current of 65A and a 200V voltage rating. It operates in a temperature range from -40°C to +175°C and can handle up to 330W of power. The IRFP4227PBF MOSFET has a gate-source voltage of 30V and is considered a high-voltage transistor, commonly used in applications like inverters, amplifiers, DC-DC converters, and UPS devices.

Applications of the IRFP4227 N-channel MOSFET

1. Various inverters
2. Different types of switching circuits
3. Uninterruptible power supplies (UPS)
4. DC to DC converters

Specifications of the IRFP4227 N-channel MOSFET

1. Transistor type: N-Channel
2. Maximum Vds (Voltage): 200V
3. Maximum Id (Current): 65A
4. Maximum Power Dissipation: 330W
5. Rds(on) (Resistance): 0.025Ω
6. Maximum (td(on)) (Turn-on delay time): 33ns
7. Maximum (td(off)) (Turn-off delay time): 21ns
8. Maximum rise time (Tr): 20ns

Documents:

IRFP4227PBF MOSFET Datasheet