4 PCS FDN306P MOSFET SOT-23 Package

Note: This item is non-returnable.

The FDN306P is a P-channel MOSFET with a channel operating voltage of 12V and a maximum channel current of 2.6A. This MOSFET is specifically optimized for power management, battery protection, and load switching in microcontroller circuits. Its on-resistance varies depending on the gate voltage; for example, at a gate voltage of -1.8V, the on-resistance is 80 milliohms. The SuperSOT-3 package design offers lower on-resistance and higher power handling compared to a standard SOT-23 package, making it easy to install on compact boards.

The small SOT-23 package allows the 12V P-channel MOSFET to be placed in limited spaces and minimizes heat dissipation. High switching speed and a power dissipation of 0.5 watts enable this MOSFET to perform optimally in energy-sensitive circuits. Features such as low on-resistance and high switching speed reduce voltage drop and energy losses in the circuit, improving system performance.

Among the important applications of this MOSFET is its use in STM32/ESP32 projects, where it is employed in microcontroller circuits for current control and battery cell protection. This MOSFET is an ideal choice for battery-powered circuits and portable devices requiring precise current control.

In summary, the FDN306P MOSFET—or more fully, the P-channel FDN306P MOSFET—with its appropriate current rating, 12V operating voltage, and compact SOT-23 package, is a reliable, efficient, and trustworthy product for various electronic circuits with space and power consumption constraints.

12V Mosfet Application:

1. Battery Management
2. Battery Protection
3. Load Switching
4. STM32/ESP32 Microcontroller Circuits
5. Charger and Power Bank Circuits
6. Current Control in Portable Devices

FDN306P MOSFET Specificatuion:

1. Channel Working Voltage (VDSS): 12 Volts
2. Maximum Channel Current (ID): 2.6 Amperes
3. On-Resistance (RDS(on)): 40 mΩ @ VGS = -4.5V
4. On-Resistance (RDS(on)): 50 mΩ @ VGS = -2.5V
5. On-Resistance (RDS(on)): 80 mΩ @ VGS = -1.8V
6. Gate Threshold Voltage (VGS(th)): -0.6V
7. Maximum Power Dissipation (PD): 0.5 Watts
8. Operating & Storage Temperature (TJ, TSTG): -55°C to 150°C
9. Junction-to-Ambient Thermal Resistance (RJA): 250°C/W
10. Junction-to-Case Thermal Resistance (RJC): 75°C/W
11. Input Capacitance (Ciss): 1138 pF
12. Output Capacitance (Coss): 454 pF
13. Reverse Transfer Capacitance (Crss): 302 pF
14. Turn-On Delay Time (td(on)): 11 to 20 ns
15. Rise Time (tr): 10 to 20 ns
16. Turn-Off Delay Time (td(off)): 38 to 61 ns
17. Fall Time (tf): 35 to 56 ns
18. Total Gate Charge (Qg): 12 to 17 nC
19. Gate-to-Source Charge (Qgs): 2 nC
20. Gate-to-Drain Charge (Qgd): 3 nC
21. Maximum Drain-Source Diode Current (IS): 0.42 A
22. Drain-Source Diode Voltage (VSD): 0.6 to 1.2 V
23. Package: SOT-23
24. Manufacturing Technology: Trench technology, enabling fast switching and low on-resistance

Documents:

FDN306P MOSFET Datasheet